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Title : Post-Layout Analysis Handles Nanometer Design Challenges
Company : Nassda
File Name : PLAWP.pdf
Size : 283099
Type : application/pdf
Date : 02-Jun-2004
Downloads : 73



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In today's competitive marketplace, designers of leading-edge integrated circuits (ICs) face unparalleled pressure to deliver first-time working silicon within aggressive schedules. With the rapid shift to nanometer process technologies of 130 nm and below, however designers find themselves confronting design challenges that severely impact their ability to produce first-time working silicon.
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