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Title : Improved Oxide Growth Rate and Uniformity through New Steam Delivery Method
Company : RASIRC
Date : 13-Jul-2007
Downloads : 46



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Oxidation of silicon is a common and frequent step in the manufacture of integrated circuits (IC). The success or failure of the IC manufacturer often depends on the ability to grow a uniform oxide film quickly and repeatedly. Water vapor is commonly used to grow oxides. RASIRC has developed a new device to deliver water vapor to oxidation furnaces.
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